Growth and Characterization of CdSe Single Crystals by Modified Vertical Vapor Phase Method
SF Zhu,BJ Zhao,YR Jin,WB Yang,XM Chen,YR Den
DOI: https://doi.org/10.1016/s0022-0248(02)00926-0
IF: 1.8
2002-01-01
Journal of Crystal Growth
Abstract:Good quality, large single crystals of CdSe were grown by the modified growth method (i.e., vertical unseeded vapor phase growth with multi-step purification of the starting material in the same quartz ampoule without any manual transfer between the steps). Lower temperature gradients (8–9°C/cm) at the growth interface were used for the crystal growth. As-grown CdSe crystals was characterized by X-ray diffraction, scanning electron microscopy, energy dispersive analyzer of X-rays, high-resistance instrument measurement, and etch-pit observation. It is found that there are two cleavage faces of (100) and (110) orientations on the crystal, the resistivity is about 108Ωcm, and the density of etch pits is about 103–4/cm2. The crystal was cut into wafers and was fabricated into detectors. The detectors were tested using an 241Am radiation source. γ-ray spectra at 59.5keV were obtained. The results demonstrated that the quality of the as-grown crystals was good. The crystals were useful for fabrication of room-temperature-operating nuclear radiation detectors. Therefore, the modified growth technique is a promising, convenient, new method for the growth of high-quality CdSe single crystals.