Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

Voltage-controlled Spin Precession in InAs Quantum Wells

Spin States in InAs/AlSb/GaSb Semiconductor Quantum Wells

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Spin Transport Through QD with Spin–orbital Interaction and Magnetic Field

Su-Schrieffer-Heeger model:Interplay of spin-orbit and Zeeman interactions

Thermally Driven Pure Spin Current Through an Interacting Quantum Dot

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Doppler velocimetry of spin propagation in a two-dimensional electron gas

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Strong tuning of Rashba spin orbit interaction in single InAs nanowires

Gate voltage control over spin relaxation length

Spin photocurrent, its spectra dependence, and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

Anomalous Rashba Spin-Orbit Interaction In Inas/Gasb Quantum Wells

Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects

Combined effect of rashba spin-orbit interaction, hydrostatic pressure and temperature on energy dispersion based ballistic conductance of InAs tunnel-coupled (double) quantum wire under exterior magnetic and electric field

Regimes of electronic transport in doped InAs nanowire

Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field

Coherent propagation of spin helices in a quantum-well confined electron gas.