Research on the Design of LiNbO3 Waveguide Intensity Modulator with a New Back Slot Structure

Mi Li,Siyuan Yu,Jing Ma,Liying Tan,Qiang Wang
DOI: https://doi.org/10.3321/j.issn:0258-7025.2008.03.019
2008-01-01
Chinese Journal of Lasers
Abstract:A LiNbO3 waveguide intensity modulator with a new back slot structure is proposed.The direction of the back slot is vertical to the beam propagation.The back slot structure can achieve low drive power and suppress the direct current(DC)-drift voltage.In addition,because both the cross section of the back slot part and the other are relatively regular,and the structure of back slot part satisfies the condition of the partial capacitances method,the Schwartz-Christoffel(SC) conform mapping can be used to design the modulator instead of the finite element method(FEM).The calculation shows that when the thickness of the back slot part is15 μm and the width is38.5 mm in the LiNbO3 with40 mm electrode,40.00 GHz modulation bandwidth can be achieved and the impedance is63.10 Ω.It is clear that this structure can also satisfy the velocity-matching condition without the buffer layer of silicon dioxide(SiO2).So this type of back slot structure is proved to be more convenient and feasible for the design of waveguide modulator.
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