Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition

C. Liu,T. Matsutani,T. Asanuma,M. Kiuchi
DOI: https://doi.org/10.1016/S0168-583X(03)00760-2
2003-01-01
Abstract:Indium tin oxide (ITO) films were deposited onto fused silica (SiO2) and microslide glass by concurrent electron-beam evaporation of ITO bulk materials and low-energy oxygen-ion-beam bombardment. The oxygen ions were produced using an electron cyclotron resonance source. The acceleration voltage was varied between 50 and 500 V and the current densities were between 20 and 100 μA/cm2. The growth rate changed from 0.04 to 0.24 nm/s. Deposition of ITO films was carried out at room temperature and 200 °C. The structural, electrical and optical properties were characterized by X-ray diffraction, atomic force microscopy, Hall-effect and optical transmission measurements. The results show that very smooth and crystalline ITO films with high conductivity and transparency can be achieved.
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