The Analyses of Wire Bonder Tool Slipping

JI Wei,XIA Zhiwei

DOI: https://doi.org/10.3969/j.issn.1004-4507.2009.04.008

2009-01-01

Abstract:Wire bond is the uppermost interlink way of the semiconductor device. This article intro-duces several basic structure of the wire bonder bonding head, and analyses the effect to the wire bond-ing technique with different structure.

What problem does this paper attempt to address?

Modeling and Analysis of Transmission Performance of Bonding Wire Interconnection

Panpan Zuo,Mengjun Wang,Hongbin Li,Tao Song,Jianying Liu,Er-Ping Li

DOI: https://doi.org/10.1109/nemo.2016.7561646

2016-01-01

Abstract:Novel analytical model for bonding wire has been proposed in this paper. Bonding wires on stacked dies with different connection paths have been modeled and simulated at high frequency. Return loss demonstrated that the transfer connection path showed better transmission performance. Furthermore, the relationship between materials with different dielectric constant and return loss were investigated. Results can help form a good guide for the package design.
Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Guoqiang Zhao,Yanping Zeng,Yi Zhao

DOI: https://doi.org/10.1109/estc60143.2024.10712080

2024-01-01

Abstract:In this work, the influence of the most important parameters on stress around hybrid bonding units is explored by 3D finite element modeling approach. The impact of pad shape, size, pitch, density, and array arrangement on the stress distribution is first investigated. The results indicate that the smaller space is harder to release stress and more prone to reliability problems. The dummy pads between electrical pads provide a wide process window for CMP process, but can also add limitations to stress and alignment. The asymmetrical structure enables higher overlay tolerance, which provides some improvement in stress concentration, especially at small pitches. Followingly, the TEM pictures evidence that the optimized bonding interface is free of gaps and voids, demonstrating excellent stress control. These results can provide guidelines for optimizing the hybrid bonding design and process, reducing potential stress threats, and enhancing the thermomechanical reliability of the bonded units.
Al-clad Cu Bond Wires for Power Electronics Packaging: Microstructure Evolution, Mechanical Performance, and Molecular Dynamics Simulation of Diffusion Behaviors

Wenting Liu,Xinyue Wang,Jing Zhang,Guoqi Zhang,Pan Liu

DOI: https://doi.org/10.1016/j.mtcomm.2024.110940

IF: 3.8

2024-01-01

Materials Today Communications

Abstract:With the advancement of power electronics, aluminum-clad copper thick bonding wires have garnered attentions due to superior electrical and thermal properties, making them well-suited for high-temperature and high-current applications. However, the impact remains unveiled of whether the growth of intermetallic compounds (IMCs) at the bonding interface presents critical challenges to the reliability of wedge wire bonds. Therefore, it is necessary to investigate the evolution behavior of Cu/Al IMCs in Al-clad copper wires. In this study, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were firstly employed to characterize the phase composition and growth behavior of Cu/Al intermetallic compounds (IMCs) at two distinct interfaces—the bonding interface and the core-shell interface—under various annealing conditions during high-temperature storage (HTS) tests, revealing a parabolic relationship between aging time and IMCs thickness. Subsequently, shear and pull tests of Al-clad copper bond wires were conducted to evaluate the bonding strength under different aging conditions, clarifying the correlation between various failure modes of the bonds and the evolution of IMCs at the bi-interfaces of this novel composite across different aging stages. Additionally, molecular dynamics (MD) simulations were employed to explore the diffusion behavior of Cu and Al atoms. It revealed that polycrystalline structures enhanced the mutual diffusion at the interface, with copper serving as the predominant element in the interdiffusion process. In conclusion, this study integrates experimental and numerical approaches to elucidate the growth mechanisms of Cu/Al intermetallic compounds and their effects on reliability, providing valuable guidance for optimizing the performance of composite bonding wires in high-temperature power device applications.
Multi-Layered Wire Bonding Structure for Impedance Matching

Jun-Jian Ju,Xing-Chang Wei,Li-Ding

DOI: https://doi.org/10.1109/icmmt52847.2021.9618616

2021-01-01

Abstract:In the traditional wire bonding structure, the distance between the signal wire and the ground wire cannot be too small, which leads to the large characteristic impedance and affects the integrity of signal transmission. To solve this problem, this paper proposes two kinds of multi-layered wire bonding structures, which can effectively reduce the characteristic impedance of bonding wire. Through numerical examples, the effectiveness of the proposed new structures is verified.
Electromagnetic Characteristics of Bonding Wires in Advanced Electronic Devices Packaging

Panpan Zuo,Mengjun Wang,Hongxing Zheng,Erping Li

DOI: https://doi.org/10.13290/j.cnki.bdtjs.2019.05.012

2019-01-01

Abstract:By simulating the effects of various arch rise, diameters and quantities of bonding wires on return loss, the electromagnetic properties of typical bonding wires in advanced package structures at high frequency were explored to guide the optimization design. Combined with its electromagnetic full-wave simulation model, an improved "T"-shaped equivalent circuit was proposed to explain the related phenomena and conclusions. The simulation results show that compared with the bonding wire with a diameter of 25 μm, the similar wire with a diameter of 75 μm can improve the return loss by nearly 10 dB at 6.8 GHz. Bonding wires with an arch rise of 0.15 mm can improve the return loss by 12.3 dB at 7.4 GHz compared with the bonding wire with an arch rise of 0.35 mm. The connection with three bon-ding wires in parallel is more expensive than a single bonding wire, but the return loss can be improved within the whole frequency range. Finally, the electromagnetic characteristics of different connection modes of bonding wires in die stacked structures were studied. The results show that the transfer type has better transmission characteristics and lower electromagnetic interference than the direct connection type.
Analysis of strain energy in nanowire heterostructures with component gradient buffer section

Yang Liu,Xian Ye,Hui Huang,Jingwei Guo,Xiaomin Ren,Yongqing Huang

DOI: https://doi.org/10.1117/12.870267

2010-01-01

Abstract:In this paper, analytical method is employed to analyze the system strain energy and critical diameter of one kind of longitudinally heterostructure nanowire which contains component gradient buffer sections. Based on the critical diameter model of F. Glas in heterostructure nonawires, calculation has been made to research on how does single-layer thickness and total thickness of gradient buffer effect the critical radius of the system. The results illustrate that component gradient buffer layer can effectively reduce the system strain energy, and the thinner the single-layer buffer section thickness, the more obvious the improvement of its critical radius; if the lattice mismatch of the heterostructure nonawires is smaller, the strain energy can be reduced more significantly, also the greater rate of increase of its critical radius. The freedom cut of the nonawires diameter can be realized by controlling the component and thickness of buffer sections. Using Au assistant MOVCD method, we can get high-quality nonawires with component gradient buffer sections, in contrast to the bad quality SEM image of the nonawires without buffer layers, which effectively prove the above conclusions.
Modeling the Interfacial De-Bonding Behavior Between Steel Wire and Adhesive

Jun Shi,Jianfeng Shi,Xinyu Nie,Yue Zhang,Guangzhong Li,Hanxin Chen,Yibin He,Qingjun Wang

DOI: https://doi.org/10.1115/pvp2018-84379

2018-01-01

Abstract:A polyethylene pipe reinforced by winding steel wires (PSP) has been widely used in petroleum, chemical engineering, and water supply, etc. The PSP has outstanding mechanical properties due to its unique composite structure. However, according to earlier research, interfacial de-bonding between steel wire and adhesive is the cause for bulging failure of PSP joint, which is more likely to occur when the temperature and inner pressure increases to some extent in the application. In this study, the interfacial behavior between steel wire and adhesive was investigated and the interfacial failure process was analyzed. The pull-out test was conducted using specimens that were manufactured following PSP process parameters. Finite element models were established to represent the mechanical behavior and the de-bonding failure process of the steel-polymer interface. Contact surface with cohesive behavior based cohesive zone model was utilized to characterize the interfacial properties. The interfacial de-bonding failure process included stick-slip interaction and frictional sliding interaction. Both the stick-slip interaction and the adhesive-friction transition were modeled in the simulation. Results were presented in terms of pull-out load-displacement relationships, maximum pull-out force, and nonlinear stress distributions. The simulation result agreed well with the experimental result.
Progress in ultrasonic bonding wire process and quality evaluation of bonding point

Zhenli Zhao,Defeng Mo,Jiarong Wu,Mengdie Jiang,Jinglin Zhang,Lin Xu

DOI: https://doi.org/10.1117/12.2285650

2017-10-24

Abstract:Wire bonding is one of the most widely used methods in the field of electrical connecting in packaging. The main characteristics of common wire bonding materials and process parameters affecting the reliability of wire bonding are discussed and analyzed. The evaluation method of wire bonding quality is described, and the measures to enhance the reliability of wire bonding are put forward. The results show that of all the wire materials, gold wire (Au) has the best comprehensive performance which used most widely. Aluminum wire (Al) and copper wire (Cu) are ideal materials for the replacement of Au because of low cost. Platinum wire (Pt) is mainly used in low temperature packaging for its low heat loss. In terms of bonding process parameters, bonding force is an important parameter for the shape and strength of bonding point. Adjusting the bonding force is an effective method to solve the problem of pad damage and bonding interface slip. Ultrasonic power and time are the important factors affecting bonding strength. Usually it is easier to bond wires with higher bonding temperature, and appropriate temperature is exist due to the device’s tolerance temperature. In the wire bonding quality evaluation methods, microscopic observation is the simplest method to evaluate the bonding quality. The mechanical testing methods include wire pull test and ball shear test. Environmental tests include temperature cycling, electromagnetic resonance test and other testing. It is mainly used to evaluate the overall performance and fatigue properties of wire bonding. As a result, the mechanical testing and environmental testing are the effective methods to adjust the new bonding process , and microscopic inspection is an effective method for bonding quality assurance.
A Review of Silver Wire Bonding Techniques

Bin An,Hongliang Zhou,Jun Cao,Pingmei Ming,John Persic,Jingguang Yao,Andong Chang

DOI: https://doi.org/10.3390/mi14112129

IF: 3.4

2023-11-20

Micromachines

Abstract:The replacement of gold bonding wire with silver bonding wire can significantly reduce the cost of wire bonding. This paper provides a comprehensive overview of silver wire bonding technology. Firstly, it introduces various types of silver-based bonding wire currently being studied by researchers, including pure silver wire, alloy silver wire, and coated silver wire, and describes their respective characteristics and development statuses. Secondly, the development of silver-based bonding wire in manufacturing and bonding processes is analyzed, including common silver wire manufacturing processes and their impact on silver wire performance, as well as the impact of bonding parameters on silver wire bonding quality and reliability. Subsequently, the reliability of silver wire bonding is discussed, with a focus on analyzing the effects of corrosion, electromigration, and intermetallic compounds on bonding reliability, including the causes and forms of chlorination and sulfurization, the mechanism and path of electromigration, the formation and evolution of intermetallic compounds, and evaluating their impact on bonding strength and reliability. Finally, the development status of silver wire bonding technology is summarized and future research directions for silver wire are proposed.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Comprehensive Study of Various Au-Au Wire Bonding Failure

Hang Chen,Lili Ma

DOI: https://doi.org/10.1109/icept50128.2020.9202595

2020-01-01

Abstract:Wire bonding was still the most popular interconnect technology in the first-level packaging. In fine pitch packaging, Au-Au bonding system was preferred, and had a higher reliability, which was widely used in consumer and military products. The quality and reliability of Au-Au bonding was influenced by the bonding process, the surface characteristics and plating structure of Au pad. In this paper, some Au-Au wire bonding failure cases were studied and the failure mechanism was discussed.
Copper Wire Bonding: A Review

Hongliang Zhou,Andong Chang,Junling Fan,Jun Cao,Bin An,Jie Xia,Jingguang Yao,Xiaobin Cui,Yingchong Zhang

DOI: https://doi.org/10.3390/mi14081612

2023-08-16

Abstract:This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics and application areas are discussed. Additionally, we provide detailed insights into the impact of Free Air Ball (FAB) morphology on bonding reliability, including its effect on bond strength and formation mechanisms. Next, the reliability of Cu wire bonding is analyzed, with a focus on the impact of intermetallic compounds and corrosion on bonding reliability. Specifically, the formation, growth, and stability of intermetallic compounds at bonding interfaces are discussed, and their effects on bonding strength and reliability are evaluated. The detrimental mechanisms of corrosion on Cu wire bonding and corrosion inhibition methods are also analyzed. Subsequently, the applications of simulation in Cu wire bonding are presented, including finite element analysis and molecular dynamics simulations, which provide important tools for a deeper understanding of the bonding process and failure mechanisms. Finally, the current development status of Cu wire bonding is summarized, and future research directions are discussed.
Mechanical Issues of Cu-to-Cu Wire Bonding

Jian Chen,Dominiek Degryse,Petar Ratchev,Ingrid De Wolf,J. Chen,D. Degryse,P. Ratchev,I. DeWolf

DOI: https://doi.org/10.1109/tcapt.2004.831745

2004-09-01

IEEE Transactions on Components and Packaging Technologies

Abstract:Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. However, since Cu is harder than Al or Au, it is expected to induce higher mechanical stresses in the substrate and more bonding problems during and/or after wire bonding. There are three steps during bonding: bond forming, ultrasonic vibration, and cooling down. In order to understand their physical nature, different techniques are applied. The bond forming process is simulated using finite element analysis (FEA) and the stress generated at the last stage (when the wire ball reaches its final shape) is presented. The grain distortion in the Cu wire bond after bonding is studied using scanning electron microscopy and orientation imaging microscopy. After ultrasonic vibration, the whole structure cools down. Due to the difference in coefficient of thermal expansion between Cu and Si, extra stress is built up. The final residual stress is measured by Raman spectroscopy. The result is compared with FEA and an excellent agreement has been achieved. The impact on the substrate by the capillary tool is clearly shown. The result also shows that the maximum tensile stress in the substrate is located near the edge of the pad and depends highly on the positioning of the wire bond.

English Else
A New Commixing Sample Preparation Technology For The Interface Analysis Of Second Wire Bonding With Tem

Xingjie Liu,Haonan Pu,Yuesheng Li,Jiaji Wang

DOI: https://doi.org/10.1109/ICEPT.2011.6067006

2011-01-01

Abstract:The strength of wire bonds will directly affect device reliability, so the study of the microstructure at the bonding interface and relative issues would have its necessity. Comparing to other micro-region analysis methods, such as SEM, XPS, AES, but the TEM technique is a conformable analytical tool due to its great advantage in the spatial analytical precision and resolution aspects for the bonding interface micro-analysis, but its sample preparation is a big challenge. This paper was mainly about a new commixing sample preparation technology for TEM analysis of the interface of Second wire bonding in wire bonding process. Conventional sample preparation method in forms of mechanical grinding with ion milling would be time-consuming, hard to be localized, and whereafter with a lower success rate, while advanced FIB micro-machining technology only could cut and form the shallower feature in the sample, or it also would be time-consuming and reduce success rate. The commixing sample preparation process that we used had maintained the advantages of the both methods while avoiding the shortcomings of the both two, its feature shows: localization with high precision (it could localize the bonding interface area accurately); obtaining a thinner sample (about 80nm in thickness) with a larger sampling area(similar to 3um); getting a higher success rate of sample preparation (approaching 100%), relatively less time-consuming (with only about 2 FIB working hours). This paper will describe the whole procedures of commixing sample preparation technology and also show the TEM analytical results of a real sample which adopt this technology. The microstructure, crystalline, and composition distribution in micro-region at the second wire bonding interface were clearly and accurately displayed.
ANALYSIS OF EFFECT OF ELECTRO-PLASTIC WIRE-DRAWING ON FRICTION AND SURFACE MORPHOLOGY OF THE WIRE

唐国翌,张锦,闫允杰,方威

DOI: https://doi.org/10.3321/j.issn:0449-749x.2001.03.015

IF: 1.7031

2001-01-01

Ironmaking & Steelmaking

Abstract:The wire drawing with electro plastic effect is a new working process, in which pulse current is introduced into the common wire drawing process. In this paper, the analysis of the surface morphology of the wire after the electro plastic drawing process by Scanning Electronic Microscope(SEM) has shown that the surface quality has been evidently improved. What's more, with the introduction of pulse current, the friction coefficient has been decreased, which reduces the drawing stress and the improves the plastic properties of the materials.
Research Progress on Bonding Wire for Microelectronic Packaging

Hongliang Zhou,Yingchong Zhang,Jun Cao,Chenghao Su,Chong Li,Andong Chang,Bin An

DOI: https://doi.org/10.3390/mi14020432

IF: 3.4

2023-02-12

Micromachines

Abstract:Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Failure Analysis for Gold Wire Bonding of Sensor Packaging Based on Experimental and Numerical Methods

Yameng Sun,Kun Ma,Yifan Song,Tongtong Zi,Xun Liu,Zheng Feng,Yang Zhou,Sheng Liu

DOI: https://doi.org/10.3390/mi14091695

2023-08-30

Abstract:There is an increasing demand for the use of automotive sensors where complex working environments may easily lead to failure. Wire pull and shear test models based on finite-element analysis are established to evaluate their reliability by investigating the failure mode and mechanism of gold wire bonding. The effect of shear force position and pull force position on failure is also analyzed. The bonding failure was verified by experiments, which is consistent with the simulation result. The results show that: (1) The three-dimensional quantitative modeling reveals the process of bonding delamination and stress concentration. (2) The bonding-slip method (BSM) is adopted in the gold ball detaching process. The concept of three states, including deformation accumulation, cracking, and disengagement, was put forward to reveal the interface stress evolution trend according to the shear testing results. The results indicate that in the interface, the stress in the deformation accumulation state decreases from the tensile side (or compression side) to the center, and the stress in the cracking and disengagement states reduces gradually from the tensile side to the edge. When the interface is completely separated, the failed shear force concentrates on 42 g. The concept and theory proposed in this work can effectively reveal the failure mechanism of bonding interface and help to establish a new failure criterion.
Wire Shorting Elimination through Wirebond Process Optimization of Semiconductor Sensor Device

Anthony Moreno,Edwin Graycochea Jr.,Frederick Ray Gomez

DOI: https://doi.org/10.9734/jerr/2020/v13i417108

2020-06-22

Journal of Engineering Research and Reports

Abstract:New and upcoming semiconductor devices and technologies are getting more challenging in assembly manufacturing process due to many factors such as complex package layout, process capability and critical bill of materials. This paper focused on the mitigation of the top major assembly reject of a semiconductor sensor device, that is the wire-to-wire shorting issue at wirebonding process. Parameter optimization particularly the looping segment 1 parameter, as well as using a reverse stitch on ball (RSOB) were employed to eliminate the wire-to-wire defect in wirebonding process. Finally, with the process optimization and improvement, a reduction of 98 percent wire-to-wire shorting occurrence was attained.
Non-continuous IMC in copper wirebonding: Key factor affecting the reliability

Allen M. Descartin,Song MeiJiang,Li Jun,Yan Bei Yue,MeiJiang Song,Jun Li,BeiYue Yan

DOI: https://doi.org/10.1109/icept.2015.7236614

2015-08-01

Abstract:In today's trend in semiconductor wirebonding assembly process, Copper (Cu) wire was presented as viable solution and alternative cost saving options to gold (Au) wire. The use of Cu wire found to be even better than Au, because of its high thermal conductivity, great electrical property and importantly low cost value. However, Cu have some challenges that needs to carefully understand, it natural nature such as its inherent material hardness, easily to get oxide, the growth of Cu/Al intermetallic compound (IMC) and others. In this paper it will discuss the process experimentations on how those challenges are addressed and studied primarily on understanding the formation of intermetallic compound, its relationship to the bondability response. An accelerated stress test prior to the formal qualification stress has been assessed as way to determine how good the bonding process is by evaluating a different wirebonding parameter combination. The findings of the study suggest that IMC formation can be improved by applying an initial USG (ultrasonic generator) Power also known as USG “prebleed” parameter as compared to the conventional wirebonding parameter. Accelerated stressing on un-molded units through Autoclave test was use to assess and mitigate the potential reliability risk. The accelerated stressing found out more presence of ball lift failure break mode which corresponds to a low wirepull reading on conditions with a bulk of non-IMC on effective bonding area. These theorized to translate a potential failure mode in the real electrical testing environment.
Feasibility Analysis of Wedge Bonding Process Using Bonding Capillaries

XIA Zhiwei,LIU Yanqing,JI Wei,GAO Yue

DOI: https://doi.org/10.3969/j.issn.1004-4507.2012.11.003

2012-01-01

Abstract:There are two different equipments which using different Ultrasonic Transducer,Bonding Tool and Bonding Process in the traditional bonding technology.They are ball bonding and wedge bonding equipment.In this paper,comparing the two Bonding process`s common points we analyze and generalize the feasibility that wedge bonding using Bonding capillaries by transforming equipment,testing appearance of bump and force of bonding.
Substrate Stresses for double load copper wire bonding

HUANG Hua,CHANG Baohua,DU Dong

2010-01-01

Abstract:Copper wire is increasingly used in microelectronics packaging manufacturing.The double load bonding process reduces the under pad damages during Cu wire bonding;however,the mechanism is not yet well understood.A non-linear 3D finite element model was used to study the Cu wire bonding procedure to analyze the stress distributions,especially in the silicon substrate,for conventional and double load wire bonding.For the same ultrasound power and the same copper ball deformation,the compressive stress under the pad with double load wire bonding is much larger than with the conventional bonding procedure,the tensile stresses are almost the same,and the shear stresses under the pad are less with double load wire bonding.The reduced damage under the pad for double load wire bonding is related to the reduced stresses.

The Analyses of Wire Bonder Tool Slipping

Modeling and Analysis of Transmission Performance of Bonding Wire Interconnection

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Al-clad Cu Bond Wires for Power Electronics Packaging: Microstructure Evolution, Mechanical Performance, and Molecular Dynamics Simulation of Diffusion Behaviors

Multi-Layered Wire Bonding Structure for Impedance Matching

Electromagnetic Characteristics of Bonding Wires in Advanced Electronic Devices Packaging

Analysis of strain energy in nanowire heterostructures with component gradient buffer section

Modeling the Interfacial De-Bonding Behavior Between Steel Wire and Adhesive

Progress in ultrasonic bonding wire process and quality evaluation of bonding point

A Review of Silver Wire Bonding Techniques

Comprehensive Study of Various Au-Au Wire Bonding Failure

Copper Wire Bonding: A Review

Mechanical Issues of Cu-to-Cu Wire Bonding

A New Commixing Sample Preparation Technology For The Interface Analysis Of Second Wire Bonding With Tem

ANALYSIS OF EFFECT OF ELECTRO-PLASTIC WIRE-DRAWING ON FRICTION AND SURFACE MORPHOLOGY OF THE WIRE

Research Progress on Bonding Wire for Microelectronic Packaging

Failure Analysis for Gold Wire Bonding of Sensor Packaging Based on Experimental and Numerical Methods

Wire Shorting Elimination through Wirebond Process Optimization of Semiconductor Sensor Device

Non-continuous IMC in copper wirebonding: Key factor affecting the reliability

Feasibility Analysis of Wedge Bonding Process Using Bonding Capillaries

Substrate Stresses for double load copper wire bonding