Preparation of Y Doped ZnO Films by Sol-gel Method and Investigation of Their Optoelectrical Properties

YANG Shenghong,ZHANG Yueli,WANG Xusheng,TANG Jian
DOI: https://doi.org/10.3969/j.issn.1005-023x.2012.06.007
2012-01-01
Abstract:The Y doped ZnO transparent conducting thin films were prepared on glass by sol-gel method.X-ray diffraction(XRD) showed that Y doped ZnO thin films had hexagonal wurtzite structure with a C-axis preferred orientation.The peak position of the(002) plane shifted to the low angle value with the increase of Y doping.From the transmittance spectrum,the average transmittance of Y doped ZnO film in the visible region(400~800nm) was beyond 85%,and the optical absorption edge obviously shifted to the shorter wavelength with increasing Y doping.So the film band gap energy can be adjusted by changing the Y doping concentration.The minimum resistivity of Y doped ZnO film is 3.68×102 Ω·cm.
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