Abstract:In this paper, We prepared two groups of the glasses, the first group is Ge x As 20 Se 80-x with x from 5 % to 32.5 %, the second group is Ge x Sb 20 Se 80-x with x from 5 % to 25 %, using the conventional melt-quench method, and investigated the effect of the elemental substitution of As by Sb on the threshold behaviors in Ge x As(Sb) 20 Se 80-x glasses. We aimed to understand that,to which degree the topological model and chemical order model can explain the correlation between the physical properties and glass compositions, and how the chemical composition can affect the transition threshold in the glasses. Glass transition temperature was measured by the differential scanning calorimeter (Mettler-Toledo, DSC1) with different scanning rates from 5 K/min to 30 K/min under a uniform nitrogen gas flow of 50 mL/min, the density of the glasses was measured by a Mettler H20 balance with a MgO crystal used as a reference. Samples from each glass composition were weighed five times and the average density was recorded, the refractive index of the glass at 1.5 um was measured by a Metricon Model 2010 prism coupler. Raman spectra were measured from a T64000 Jobin-Yvon-Horiba micro-Raman spectrometer equipped with a liquid-nitrogen-cooled CCD detector. The 830 nm laser line was used as an excitation source, and the laser power was kept as small as possible to avoid any photo-induced effects. The resolution of the spectrometer was about 0.5 cm -1 . The result from systematic measurements of these physical parameters shows that, while the transition thresholds at MCN=2.4 and 2.67 were verified in the Ge-As-Se glasses with ideal covalent network, these two transitions represent the covalent network structure inside the glass from an under-constrained “floppy” network to an over-constrained “rigid” phase and from the two-dimensional to the three-dimensional “stressed rigid” phase respectively. However, when As is substituted by Sb, the Ge x Sb 20 Se 80-x glass with non-ideal covalent network will change of the transition thresholds, which changes to the chemically stoichiometric composition. We further deconvolved Raman scattering spectra into different structural units and the change of their respective intensity showed the same behavior, and this was ascribed to the chemical effect induced by a large difference of the atomic radius between As and Sb, and a relatively strong ionic feature of the element Sb.

Electronic Structure Of Glassy Chalcogenides As4se4 And As2se3: A Joint Theoretical And Experimental Study

Structure and Physical Properties of Chalcogenide Glasses

Atomistic Comparison Between Stoichiometric and Nonstoichiometric Glasses: the Cases Ofas2se3and

Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. Part I: The formation of the $ppσ$-network

Formation and Structure of Chalcohalide Glasses in the As2Se3-AsTe-CuI System

Calculation of small arsenic and antimony chalcogenide clusters with an application to vitreous chalcogenide structure

Structural Study of Chalcogenide Glasses in the Bi5As35Se60-xTex System

Elastic Moduli, and Estimations of Some Physical, Thermal, and Optical Parameters of Ge-Se-As Glassy Systems with Improved Mechanical Strength

Electronic Signature of the Intermediate Phase in Ge_xSe_{1-x} Glasses: A Joint Theoretical and Experimental Study

Breakdown of Intermediate Range Order in Asse Chalcogenide Glass

Effect of Annealing Conditions on the Physio-Chemical Properties of Spin-Coated As2se3 Chalcogenide Glass Films

Structure ∊16solved by the Strong Reflections Approach

Intermediate phase, network demixing, boson and floppy modes, and compositional trends in glass transition temperatures of binary AsxS1-x system

Micro-structural studies of GeSe2-Ga2Se3-MX (MX = CsI and PbI2) glasses using Raman spectra

Glass Formation and Properties of Chalcogenides in A Gese2-As2se3-Pbse System

Properties of Chalcohalide Glasses in the Ge-As-Se-Te-I System

Electronic, Optical and Lattice Dynamics Properties of Layered GaSe1-xSx

Unraveling the Structural and Bonding Nature of Antimony Sesquichalcogenide Glass for Electronic and Photonic Applications

Effect of the elemental substitution on threshold behaviours in Ge-As(Sb)-Se glasses

Structural and vibrational characteristics of Ge-S-Br glass system: ab initio calculation and Raman study