Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Grain-Boundary Evolution in a Pentacene Monolayer

Grain Boundary Effect on Charge Transport in Pentacene Thin Films

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films

Fractal-Mound Growth of Pentacene Thin Films

Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Pentacene islands grown on ultra-thin SiO2

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Structure Versus Electron Effects in the Growth Mode of Pentacene on Metal-Induced Si(111)-3×3 Surfaces

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si

Periodic Grain Boundaries Formed by Thermal Reconstruction of Polycrystalline Graphene Film.

Electrostatic Field and Partial Fermi Level Pinning at the Pentacene-Sio2 Interface

Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Structural Transition of Pentacene Monolayer on Cd(0001)

(Invited) Defects in Cast-Mono Crystalline Silicon

Photoinduced interfacial charging and "explosion" of monolayer pentacene islands.

Biaxial growth of pentacene on rippled silica surfaces studied by rotating grazing incidence X-ray diffraction

Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals

Pentacene and Tetracene Molecules and Films on H/Si(111): Level Alignment from Hybrid Density Functional Theory

Influence of graphene-substrate interactions on configurations of organic molecules on graphene: pentacene/epitaxial graphene/SiC