Abstract:High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

Properties of ZnO Films Prepared by MO‐CVD under Oxygen Rich Condition on Sapphire Substrate

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Structures and Photoluminescence Properties of ZnO Films Epitaxially Grown by Atmospheric Pressure MOCVD

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition

Characteristics of c-axis oriented large grain ZnO films prepared by low-pressure MO-CVD method

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Characteristics of Zno Film Grown by Mocvd

Structural and Optoelectrical Properties of Zno Thin Films Deposited on Gaas Substrate by Metal-Organic Chemical Vapour Deposition (Mocvd)

Optical and Structural Properties of ZnO Films Grown on Si(100) Substrates by MOCVD - Art. No. 60290G

Substrate Temperature Dependence of Properties of Zno Thin Films Deposited by Lp-Mocvd

Structure and Optical properties of ZnO Films DC Reactively Sputtered at Different Oxygen Partial Pressure

XPS Studies on ZnO Thin Films Grown by MOCVD

Optical Properties of ZnO Film by Plasma-Assisted MOCVD

Effect of the Oxygen Partial Pressure on the Properties of ZnO Thin Films Grown by Metalorganic Vapor Phase Epitaxy

ZnO Thin Film Prepared by Low Pressure MOCVD Method

High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD

Photoluminescence Properties of Two-Dimensional Planar Layer and Three-Dimensional Island Layer for Zno Films Grown Using Mocvd

Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Deposited by Low-Pressure MOCVD