Growth and Properties of Cu-based Al-doped ZnO Multilayer Films

王钰萍,叶春丽,吕建国,丛宏林,江忠永,叶志镇
DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2011.06.007
2012-01-01
Abstract:AZO/Cu bi-layer, Cu/AZO bi-layer, and AZO/Cu/AZO tri-layer films were prepared on glass substrates by DC magnetron sputtering at different temperatures. The comparative study of electrical and optical properties revealed that AZO/Cu hi-layer films possessed superior photoelectric properties among the three multilayer films, with optimized growth temperatures in the 100-150℃ range. Effects of growth temperature on the structural property and surface morphology of AZO/Cu bi-layer films were further investigated. Moderate growth temperatures could lead to high crystal quality of the films, and therefore improve the photoelectric properties. AZO/Cu bi-layer films grown at 150℃ had the highest figure of merit of 1.11×10^-2Ω^-1, with a low sheet resistance of 8.99 Ω/sq, high visible transmittance of 80%, and near infrared reflectance of about 70%. The combination of good transparent-conductive property, excellent nearinfrared reflectivity, and low-temperature deposition enables the AZO/Cu bi-layer films to be widely used in various fields such as coated glasses, solar cells, and flat panel displays.
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