Defects Study of ZnO Film Prepared by Thermal Oxidation Using a Slow Positron Beam

CHEN Zhiquan,WANG Dong,ZHANG Hongjun,DAI Yiqun
DOI: https://doi.org/10.3321/j.issn:1671-8836.2007.05.021
2007-01-01
Abstract:A thin Zn film was prepared using the pulsed laser deposition method.The ZnO film was obtained after oxidation the Zn film in open air.Raman scattering measurement confirms that the oxidized film has the wurtzite structure of ZnO.However,positron annihilation measurements reveal that the ZnO film prepared by thermal oxidation contains large number of open volume defects.Most of the defects are vacancy clusters which exist in the grain boundary region.By annealing the ZnO film at high temperatures up to 900℃,most of the defects can be removed.
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