Abstract:Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical and optical quality on Si(100) or polymer substrates in a N2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided by efficient microplasma lamps. Irradiating liquid TEOS layers, produced by spin-coating the precursor onto a substrate, with a VUV intensity of 13 mW cm−2, yields 40 nm-thick SiO2 films having a dielectric breakdown strength (Eb) of 5 MV cm−1, for which no precedent exists in the deposition of oxide films at 300 K. If room temperature-deposited films are post-annealed at 200 °C, Eb rises to 7.5 MV cm−1, which is <12% below the measured value (8.5 MV cm−1) for 40 nm SiO2 films grown by thermal oxidation. The deposition of 1 μm thick, stoichiometric SiO2 films requires only 20 min of VUV illumination at low optical fluences, and films with thicknesses of ∼35–60 nm exhibit a refractive index of 1.45 (633 nm). X-ray photoelectron spectrometry and Rutherford backscattering analysis indicate that, despite the deposition temperature, hydrocarbon impurity levels are near or below the detection limit. The capability for depositing 960 nm-thick SiO2 films uniformly (to within 0.6%) by liquid → solid photochemical conversion over a 5 cm diameter Si substrate and patterning films onto flexible polymer substrates has also been demonstrated.

Silicon Oxide Synthesized Using an Atmospheric Pressure Microplasma Jet from a Tetraethoxysilane and Oxygen Mixture

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Surface Properties of Silicon Oxide Films Deposited Using Low-Pressure Dielectric Barrier Discharge

Local Area Deposition of SiOC Films by Using a Very-high-frequency Atmospheric Pressure Microplasma Jet from Tetraethoxysilane

Deposition of SiOx films with a capacitively-coupled plasma at atmospheric pressure

Surface Oxidation of Multicrystalline Silicon Using Atmospheric Pressure Plasma Jet Driven by Radio Frequency of 2.0 MHz

TiSiOx Gate Dielectrics Produced by Reactive Sputtering for High Performance InGaZnO Thin Film Transistors

Growth of Silicon Oxynitride Films by Atmospheric Pressure Plasma Jet

Deposition of Low Dielectric Constant Sioc Films by Using an Atmospheric Pressure Microplasma Jet

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Effect of Applied Voltage on Localized Deposition of Silicon Dioxide-like Films on Stainless Steel Using Atmospheric Pressure Microplasma Jet

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Deposition of Silicon Oxide Coatings by Atmospheric Pressure Plasma Jet for Oxygen Diffusion Barrier Applications

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure