Boron Carbide And Silicon Oxide Hetero-Nanonecklaces Via Temperature Modulation

Jifa Tian,Xingjun Wang,Lihong Bao,Chao Hui,Fei Liu,Tianzhong Yang,Chengmin Shen,Hongjun Gao
DOI: https://doi.org/10.1021/cg0704246
IF: 4.01
2008-01-01
Crystal Growth & Design
Abstract:Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been successfully synthesized via temperature modulation. This kind of nanostructure was formed by coating 100-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two-step model at different temperatures and the poor wettability between boron carbide and silicon oxide play important roles in the growth of hetero-nanonecklaces. Photoluminescence of the synthesized BCSiO hetero-nanonecklaces shows enhanced visible light emissions at 637.6 nm, which is attributed to the small size of the boron carbide nanowires and defects induced by silicon oxide sheaths.
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