Abstract:A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self‐consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no‐flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na‐contaminated MIS test structures agrees well with measurements. The model successfully captures the role of long‐range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.

Analytical Modeling of Metal-Insulator-Semiconductor Interconnects Using the Energy Based Approach

Accurate Model Of Metal-Insulator-Serniconductor Interconnects

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Modeling and Characterization of On‐Chip Interconnects

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Impedance Calculation and Equivalent Circuits for Metal-Insulator-metal Plasmonic Waveguide Geometries.

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Finite-difference Time-Domain Macromodel for Simulation of Electromagnetic Interference at High-Speed Interconnects

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

A Compact Model of Metal–Ferroelectric-Insulator–Semiconductor Tunnel Junction

Modeling And Analysis Of Metal Interconnect Resistance Of Power Ic'S

General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and non-equilibrium Green's function

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors