Structural Correlation In Tantalum Nitride Formation By Direct Nitrogen Implantation

X Zhou,HK Dong,HD Li,BX Liu
DOI: https://doi.org/10.1016/0042-207X(89)90227-3
IF: 4
1989-01-01
Vacuum
Abstract:Tantalum targets were implanted with 80 keV nitrogen ions at doses from 5 × 10 16 to 5 × 10 17 N cm −2 at room temperature. X-ray analyses of the implanted layers show a correlation between the types of nitrides formed and the implantation dosage. As the nitrogen content increases nitrogen-rich nitrides start forming. Ta 2 N first forms at the lower implantation level; at higher doses TaN starts forming. Possible shearing mechanisms responsible for nitride formation are proposed.
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