Electronic properties of Hg1-xCdxTe at different temperatures

Xiao-ping TAO,La-zhen SUN
DOI: https://doi.org/10.3969/j.issn.1005-4642.2010.09.008
2010-01-01
Abstract:Electronic properties of Hg1-xCdxTe samples at different temperatures are studied.The changes of the Hall coefficient RH,conductivity σ and Hall mobility μH at different temperatures between 80 K and 300 K are tested and analyzed.The results show that the Hg1-xCdxTe crystal is p-type at low temperature,but changes to n-type at room temperature.
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