Optical and Transport Properties of Δ-Doped Pseudomorphic AlGaAs/InGaAs/GaAs Structures

W. Z. Shen,W. G. Tang,S. C. Shen,A. Dimoulas
DOI: https://doi.org/10.1007/bf02096051
1994-01-01
International Journal of Infrared and Millimeter Waves
Abstract:We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm−2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed.
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