Abstract:The photoluminescence (PL) quantum yield (QY) of CdSe nanocrystals during their growth under a given set of initial conditions increases monotonically to a certain maximum value and then decreases gradually. Such a maximum is denoted as a PL "bright point", which does not always overlap with the minimum point of the PL peak width for the same reaction. The experimental results suggest that the existence of the PL bright point is a general phenomenon during the growth of semiconductor nanocrystals and likely is a signature of an optimal surface structure/reconstruction of the nanocrystals grown under a given set of initial conditions. The position of the bright point, the highest PL QY, the types of the bright points (sharp or flat), the sharpness of the PL peak, etc., were all strongly dependent on the initial Cd:Se ratio of the precursors in the solution. A large excess of the selenium precursor, with 5-10 times more selenium precursor than the amount of the cadmium precursor, was found necessary to achieve a high PL QY value and a narrow emission profile. The existence of the PL bright point and the sensitive temporal variation of the PL QY during the growth of semiconductor nanocrystals can explain the unpredictable nature and poor reproducibility of the PL properties of the as-prepared semiconductor nanocrystals observed previously. Furthermore, the knowledge gained in this study enabled us to reproducibly synthesize highly luminescent CdSe nanocrystals through a relatively simple and safe synthetic scheme. In a traditionally weak emission window for CdSe nanocrystals, the orange-red optical window, the PL QY of the as-prepared CdSe nanocrystals reached as high as 85% at room temperature, and the full width at half-maximum of the corresponding PL peak was as narrow as 23 nm, about 65-80 meV depending on the emitting position. The PL properties of the as-prepared CdSe nanocrystals are stable upon aging for at least several months. These as-prepared nanocrystals represent a series of best emitters that are highly efficient, highly pure in emission color, stable, and continuously tunable by simply varying the size of the nanocrystals.

Growth and Photoluminescence Properties of Cds Solid Solution Semiconductor

Preparation of Sr1−xCaxYSi4N7:Eu2+solid Solutions and Their Luminescence Properties

Control of Photoluminescence Properties of CdSe Nanocrystals in Growth.

Dynamics of bound exciton complexes in CdS nanobelts.

Growth mechanism and photoluminescence of CdS nanobelts on Si substrate

Luminescence properties of Ca1-xSrxSe:Ce phosphors and their potential application for GaN-based LEDs

Photoluminescence Properties of Cds/Zno Nano-Composites Structure

Photoluminescent Properties of CdS Quantum Dots Doped in Silica Xerogel

Synthesis and Luminescence of CdS/ZnS Core/Shell Nanocrystals

Luminescence studies of CdS spherical particles via hydrothermal synthesis

Facile Synthesis and Luminescence Characteristics of High-Quality Cds: Eu/Zns Core/Shell Nanocrystals with Biocompatibility

Coated Semiconductor Nanoparticles - the Cds/Pbs Systems Photoluminescence Properties

Selective Passivation of Surface toward Bright Yellow Defective Emission of CdS Quantum Dots

Preparation and Optical Properties of Solid Solution Semiconductor (zn X Cd1−x S) Doped Silica Glasses

Composition-controllable synthesis and optical properties of non-integral stoichiometry compound ZnxCd1-xS nanorods

Study of Photoluminescence of CdS/ZnS Core/Shell Quantum Dots

Facile synthesis and observation of discontinuous red-shift photoluminescence of CdTe/CdS core/shell nanocrystals

Photoluminescence from colloidal CdS-CdSe-CdS quantum wells

Sb3+-doped 0D Cs3GdCl6 microcrystals with a near-unity photoluminescence quantum yield and high thermal quenching resistance for light-emitting application

Synthesis and Wavelength-Tunable Luminescence Property of Wurtzite ZnxCd1−xS Nanostructures