Growth mechanism and photoluminescence of CdS nanobelts on Si substrate

Weifeng Liu,Chong Jia,Chuangui Jin,Lianzeng Yao,Weili Cai,Xiaoguang Li
DOI: https://doi.org/10.1016/j.jcrysgro.2004.05.093
IF: 1.8
2004-01-01
Journal of Crystal Growth
Abstract:Large-scale CdS nanobelts were synthesized using a simple physical evaporation of CdS particles under controlled conditions on an Si substrate without any catalyst. The synthesized nanobelts are single crystals with a hexagonal structure growing along the [001] direction and the growth process follows a vapor–solid mechanism. Two emission bands around 517 and 735nm of the nanobelts are observed, and the X-ray photoelectron spectroscopy (XPS) results reveal that the band at 735nm originates from the Vs+ vacancies.
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