Controlled Growth of Metal-Free Vertically Aligned CNT Arrays on SiC Surfaces

Zhen Wang,Qiang Fu,Xuejun Xu,Hongbo Zhang,Wenliang Li,Min Gao,Dali Tan,Xinhe Bao
DOI: https://doi.org/10.1016/j.cplett.2010.12.086
IF: 2.719
2011-01-01
Chemical Physics Letters
Abstract:The growth mechanism of metal-free carbon nanotube (CNT) arrays on SiC surface was investigated systematically using high temperature annealing of 6H-SiC(000-1) crystals under various atmospheres, including inert, hydrogen-containing, and oxygen-containing environments. Carbon nanowall structure forms under the inert and hydrogen-containing atmospheres, while vertically aligned CNT arrays can be obtained in oxygen-containing atmospheres, such as H2O. The comparative studies reveal that oxygen-containing species play a critical role in the formation of CNTs on SiC. The transient SiO clusters formed at the C/SiC interface are proposed to be the active sites for CNT growth on SiC.
What problem does this paper attempt to address?