Effects of Ion Implantation on Electrical Properties of ITO Thin Film

王文文,王峥,郝维昌
DOI: https://doi.org/10.3969/j.issn.1007-2780.2009.02.007
2009-01-01
Abstract:In2O3∶Sn (ITO) thin films were implanted by Sn+, Ag+ and Mo+ ions with diffe-rent dose of implantation and annealed in air at 250 ℃ for 1 h. The as-deposited sample and implanted ones before and after annealing were characterized by Hall measurement to investigate the dependencies of the electrical properties of ITO on the metal kind and dose of ion implantation. It is indicated that various ion implantation decrease the conductivities of ITO, while heat annealing has an opposite effect. Mo+ ion implantation supplies more carriers than Sn+ and Ag+. Sn+ ion implantation influences the mobility of ITO the least among the three kinds of ions. With a dose of 1×1015 cm-2, Mo+ implantation and the following heat annealing increase the carrier concentration of ITO by 14%.
What problem does this paper attempt to address?