Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

The Effect of Film Thickness on the C40 TiSi[sub 2] to C54 TiSi[sub 2] Transition Temperature

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Effects of intermediate phase C40 TiSi2 on the formation temperature of C54 TiSi2 with a Ta interlayer

Structural Transitions in Titanium Amorphous-Silicon Multilayers

Thermal stability improvement of ultrathin CoSi2 film formed by TiN capping layer and Co/Ti/Si ternary solid phase reaction

EFFECT OF CRYSTALLINE PHASE FORMATION ON OPTICAL PROPERTIES OF TiSi2 THIN FILMS

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

C54-TiSi 2 FORMATION USING NANOSECOND LASER ANNEALING OF A-Si/Ti/A-Si STACKS

X-ray photoelectron spectroscopy analysis of the effect of thickness on the transformation temperature of NiTi alloy thin films

Alternative Pathway for the Formation of C54tisi(2)

Effects of Xe+ irradiation on Ti3SiC2 at RT and 500 °C

Effects of Interphase Thickness and Heat Treatment on Transverse Thermal Diffusivity of 3 D C / SiC Composites

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Superconductivity of Bilayer Titanium/indium Thin Film Grown on SiO 2 /Si（001）

FORMATION OF C54 TiSi2 ON Si(100) USING Ti/Mo AND Mo/Ti BILAYERS

Numerical Simulation on Controlling the Front-Side Temperature of Thinned SiC Substrate During Ohmic Contact to Ni or Ti Using Back-Side Laser Annealing

Microscopic Evidence Ofc40andc54in(ti

Highly Thermal-Stable Amorphous TaSi2Cx Thin Films

Electrical Properties Of The Tisi2-Si Transition Region In Contacts: The Influence Of An Interposed Layer Of Nb