Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature
D.Q. Xiao,Gang He,M. Liu,J. Gao,P. Jin,S.S. Jiang,W.D. Li,M. Zhang,Y.M. Liu,Jianguo Lv,Z.Q. Sun
DOI: https://doi.org/10.1016/j.jallcom.2016.07.179
IF: 6.2
2016-01-01
Journal of Alloys and Compounds
Abstract:In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO2 doped ZrO2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO2 doped ZrO2 is up to 600 °C. The transmittance and band gap value of the ZrTiOx film were about 75% and 4.0 eV, respectively. 300 °C-annealed ZrTiOx MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7 × 10−4 A/cm2 were obtained. The dominant conduction mechanisms of Al/ZrTiO4/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result, it can be concluded that sol-gel derived ZrTiOx gate dielectric displays potential application as is a promising candidate in future MOS electronic devices.