Dielectric Property and Electrical Conduction Mechanism of ZrO2–TiO2 Composite Thin Films

Ming Dong,Hao Wang,Liangping Shen,Yun Ye,Cong Ye,Yi Wang,Jun Zhang,Yong Jiang
DOI: https://doi.org/10.1007/s10854-011-0378-x
2011-01-01
Journal of Materials Science Materials in Electronics
Abstract:ZrO2-TiO2 composite films were fabricated by radio frequency magnetron sputtering and post annealing in O-2. It was found the films remained amorphous below the annealing temperature of 500 A degrees C. The as-deposited ZrO2-TiO2 film has a high dielectric constant of 22, and which increases to 34 after annealing at 400 A degrees C. At low electric field, the dominant conduction mechanisms are Schottky emission for both the as-deposited and the annealed thin films. At high electric field, the conduction mechanism changes to space-charge-limited current and then changes to Poole-Frenkel (PF) emission after annealing at 400 A degrees C.
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