Abstract:Re-based double perovskites (DPs) have garnered substantial attention due to their high Curie temperatures (TC) and display of complex interplay of structural and metal-insulator transitions (MIT). Here we systematically study the ground-state electronic and structural properties for a family of Re-based DPs A2BReO6 (A=Sr, Ca and B=Cr, Fe), which are related by a common low-energy Hamiltonian, using density functional theory +U calculations. We show that the on-site interaction U of Re induces orbital ordering (denoted C-OO), with each Re site having an occupied dxy orbital and a C-type alternation among dxz/dyz, resulting in an insulating state consistent with experimentally determined insulators Sr2CrReO6, Ca2CrReO6, and Ca2FeReO6. The threshold value of URe for orbital ordering is reduced by inducing Eg octahedral distortions of the same C-type wavelength (denoted C-OD), which serves as a structural signature of the orbital ordering; octahedral tilting also reduces the threshold. The C-OO and the concomitant C-OD are a spontaneously broken symmetry for the Sr-based materials (i.e., a0a0c− tilt pattern), while not for the Ca-based systems (i.e., a−a−b+ tilt pattern). Spin-orbit coupling does not qualitatively change the physics of the C-OO/C-OD, but can induce relevant quantitative changes. We prove that a single set of UCr,UFe,URe capture the experimentally observed metallic state in Sr2FeReO6 and insulating states in other three systems. We predict that the C-OO is the origin of the insulating state in Sr2CrReO6, and that the concomitant C-OD may be experimentally observed at sufficiently low temperatures (i.e., space group P42/m) in pure samples. Additionally, given our prescribed values of U, we show that the C-OO induced insulating state in Ca2CrReO6 will survive even if the C-OD amplitude is suppressed (e.g., due to thermal fluctuations). The role of the C-OO/C-OD in the discontinuous, temperature driven MIT in Ca2FeReO6 is discussed.

First principles study of the electronic structure of ReSi1.75

First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

New 111-type Semiconductor ReGaSi Follows 14e- Rules

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Crystal Structures, Superconducting Properties, and the Coloring Problem in ReAlSi and ReGaSi

Electronic structure and energy level schemes of RE3+:LaSi3N5 and RE2+:LaSi3N5-xOx phosphors (RE= Ce, Pr, Nd, Pm, Sm, Eu) from first principles

The First Principle Study: Electronic and Optical Properties in Bi2Se3

Electronic Structure and Bonding Mechanism of La-Ir-Si: A First-Principles Study

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Electron correlation and the phase diagram of Si

Re-t2g-splitting-driven semiconductor gaps in ferrimagnetic double perovskite Ca2MReO6 (M=Cr,Fe) from first principles

First-principles Study of the Atomic and Electronic Structures of Pb on Si(001)

Pressure-induced Metallization and Superconducting Phase in ReS2

Strong enhancement of superconductivity in the topological transition metal silicide W5Si3 by Re doping

Symmetry-breaking-dependent electronic structures and strain regulation in ReSeS monolayer

Electronic Structure and Optical Properties of Monolayer $ReS_2$ with Defect Controlled by Strain Engineering

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer

Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

Structural and metal-insulator transitions in rhenium-based double perovskites via orbital ordering