Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Mass transfer of metal ion implantation into metal targets at elevated temperatures

Simulated spatial and temporal dependence of chromium concentration in pure Fe and Fe-14%Cr under high dpa ion irradiation

High-Intensity Titanium Ion Implantation into Aluminum under Conditions of Repetitively-Pulsed Energy Impact of a Beam on the Surface

Ion Implantation-Induced Plastic Phenomena in Metallic Alloys

MD simulation study on the microstructural evolution of single-crystal Fe with pre-existing defects by Cr ion implantation

Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations

High Current Ni- and Fe-ion Implantation into an Al Surface to Modify the Mechanical Properties

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Characterising Ion-Irradiated FeCr: Hardness, Thermal Diffusivity and Lattice Strain

Structural and Conductive Changes of Alumina Ceramics and Silicon Crystal Implanted with High-Flux Ti Ion

Revealing the Temperature-Dependent Hardening Mechanisms of Non-Uniformly Distributed Defects for Ion-Irradiated Metals: Experiments and Modeling

Evolution of Ion-Irradiated Point Defect Concentration by Cluster Dynamics Simulation*

Computer-Simulations Of The Ion-Implantation Process In Layered Materials

Simulation on Surface Morphology Evolution of Metal Targets Irradiated by Intense Pulsed Electron Beam

Behaviour Of Mevva Metal Ion Implantation For Surface Modification Of Materials

Low energy, high current density ion implantation of materials at elevated temperatures for tribological applications

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Modification of surface mechanical properties of aluminum by high current Mo ion implantation using a MEVVA ion source

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Atomic-Scale Mechanism Investigation of Mass Transfer in Laser Fabrication Process of Ti-Al Alloy via Molecular Dynamics Simulation