Optical and Structural Properties of GaN Materials and Structures Grown on Si by Metalorganic Chemical Vapor Deposition

ZC Feng,X Zhang,SJ Chua,TR Yang,JC Deng,G Xu
DOI: https://doi.org/10.1016/s0040-6090(02)00096-2
IF: 2.1
2002-01-01
Thin Solid Films
Abstract:GaN thin films, undoped, Si- and Mg-doped, and InGaN–GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. Their optical and structural properties were studied by a variety of characterization techniques, including X-ray diffraction (XRD), Raman scattering, Fourier transform infrared reflectance, photoluminescence, scanning and transmission electron microscopy. Wurtzite GaN structure with the single crystalline grain size up to ∼2 μm is confirmed, and material properties are improved by adjusting the growth conditions and buffer layer structural design.
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