Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Magneto-optical Far-Infrared Absorption Spectroscopy of the Hole States of Indium Phosphide

Charge Conversion Of Nearly Free And Impurity Bound Magneto-Trions Immersed In 2d Electron Or Hole Gas With Optically Tunable Concentration

Magnetopolaron Interactions in N-Type Indium Phosphide

Magneto‐Optical Properties of InSb Semiconductor Heterostructures

Zeeman spectroscopy of the Zn acceptor in InP

Plasma Frequency and Dielectric Function Dependence on Doping and Temperature for P-Type Indium Phosphide Epitaxial Films

Interband Magneto-Spectroscopy in Insb Square and Parabolic Quantum Wells

Lyman spectra of holes bound to Cu, Ag, and Au acceptors in ZnTe and CdTe

Hole Migration and Optically Induced Charge Depletion in GaSb/GaAs Wetting Layers and Quantum Rings

Infrared Magneto-Optical Absorption Of Shallow Donors In Gaas/Gaasal Quantum Dots

Magneto-optical Conductivity of a Band-Inverted Charge Transfer Insulator

Optical Detection of Plasmonic and Interband Excitations in 1-Nm-wide Indium Atomic Wires

Optical Transitions Inpbte∕cdtequantum Dots

Indium defect complexes in (In x Ga 1−x ) 2 O 3 : A combined experimental and hybrid density functional theory study

Electron and Hole Contributions to Normal-State Transport in the Superconducting System Sn1−xInxTe

High-precision measurements and theoretical calculations of indium excited-state polarizabilities

Acceptor States in the Photoluminescence Spectra of N-Inn

The Effects of Light–heavy Hole Transitions on the Cutoff Wavelengths of Far Infrared Detectors

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

An Anomalous Magneto-Optic Effect in Epitaxial Indium Selenide Layers

Anomalies in the Linear Absorption, Transient Absorption, Photoluminescence and Photoluminescence Excitation Spectroscopies of Colloidal Inp Quantum Dots