Quantitative analysis of microstructure in epitaxial BiFeO_3 film by TEM

ZHANG Teng,YU Rong,ZHU Jing,ZHAN Qian,ZHU Ying-hao
2012-01-01
Abstract:Recently,epitaxial BiFeO3 films have been intensively studied due to their exotic phase structures and properties.The investigation about the microstructure of BiFeO3 might shed light on the relationship between structures and properties.In this paper,the Cs-corrected TEM is used to study the microstructure of epitaxial BiFeO3 films on the LaAlO3 buffer/Si substrate.By quantitative analysis of atomic positions of Bi and Fe,the 109°ferroelectric domain wall with 4.4°distortion angle composed by was identified.Relatively large c/a ratio in regions with complicate strain condition was also observed.
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