Abstract:Here we report the evolution of Ni stress in electroplated Ni films and investigate its origins as a function of electroplating time. First, low stress 200-nm-thick Ti / 200-nm thick Ni seed layers are deposited onto Si (100) wafers via electron-beam evaporator.Then, Ni films are electroplated onto the seeded Si (100) wafers in an All-Chloride bath. We observe that Ni grains nucleate prominently in the [111] direction aligning with Si[100]. Using optical curvature measurements, scanning electron microscopy (SEM), and X-ray diffraction (XRD) measurements, we quantify the electroplated Ni stress and investigate its evolution as a function of electroplated Ni thickness, grain size, crystal orientation, crystallite size, lattice spacing, and dislocation density. Particularly, when averaged electroplated Ni thickness was increased from 2.1 um to 5.9 um, Ni tensile stress reduced from 604.8+-137.9 MPa to 339.8+-74.7 MPa as (1) average Ni grain size increased by 40.9+-1.3 % (Ni lattice constant expanded by 0.19+-0.03 % in the [220] in-plane direction and shrunk by 0.22+-0.04 % along normal [111] direction), (2) Ni grain growth along Ni [110] was inhibited and that along Ni [100], [111], and [311] were promoted, (3) Ni crystallite size improved by 26.3+-6.2%, and (4) Ni dislocation density reduced by 42.7+-10.0%. Overall, Ni stress is shown to be strongly correlated with the Ni structure, which is a function of electroplating time, and both can be quantified through optical and structural characterization techniques.

Effect of Ni Interlayer on Stress Level of Cosi2 Films in Co/Ni/Si(100) Bi-Layered System

Effect of Pre-Co-deposition Ni Ion Implantation on the Stress Level of CoSi2 Films on Si(100)

The Influence of Ti and TiN on the Thermal Stability of CoSi2.

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Improvement Of The Thermal Stability Of Nisi Films By Using A Thin Pt Interlayer

Experimental and First principle calculation of Co_xNi_{(1-x)}Si solid solution structural stability

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

Effect of Pre-Co-Deposition C+ Implantation on the Stress Level of Cosi2 Films Formed on Si(100) Substrates

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

Effect of Pt Interlayer on Thermal Stability of NiSi Films

Correlation of Structure and Stress in Electroplated Thick Ni Films

Comparison of the Thermal Stabilities of Nisi Films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si Systems

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Comparison Of The Thermal Stability Of Nisi Films In Ni/Pt/(111)Si And Ni/Pt/(100)Si Systems

Effects of C/Si ratios on structures and behaviors of NbSiCN nanocomposite films synthesized by reactive magnetron sputtering

Formation and properties of ternary silicide (CoxNi1-x)Si2 thin films

Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100)

SiO x mediated epitaxial ternary silicide (Co 1-xNi x) Si 2

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Effects of interfacial residual stress on mechanical behavior of SiCf/SiC composites