Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

ZnO–Si side-to-side biaxial nanowire heterostructures with improved luminescence

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Structure and Cathodoluminescence of Individual ZnS/ZnO Biaxial Nanobelt Heterostructures.

ZnS/Zn2SnO4 Biaxial Nanowire Heterostructures

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

Highly Uv Luminescent Zno Microtetrapod-On-Nanowire Hybrids

Enhanced Photoluminescence Properties of Bismuth Sulfide Nanocrystals with Core-Shell Ag@SiO_2

On-nanowire Spatial Band Gap Design for White Light Emission.

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Electrical Transport and Electroluminescence Properties of N-Zno Single Nanowires

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

Fabrication and Photoluminescence of Sio2-Sheathed Semiconducting Nanowires: the Case of Zns/Sio2

Multiangular Branched ZnS Nanostructures with Needle-Shaped Tips: Potential Luminescent and Field-Emitter Nanomaterial

Synthesis, Characterization and Optical Properties of ZnS Nanobelt/zno Nanoparticle Heterostructures

Structure and Optical Properties of Individual Hierarchical ZnS Nanobelt/zno Nanorod Heterostructures

Boosting light emission from Si-based thin film over Si and SiO(2) nanowires architecture.

Aqueous Phase Synthesis and Enhanced Field Emission Properties of ZnO-Sulfide Heterojunction Nanowires.