Development‐free Vapor Photoetching Effect of Azide‐type Photopolymers

XY HONG,JQ XIAO,Z ZHOU,RX PEI
DOI: https://doi.org/10.1002/pol.1984.170221144
1984-01-01
Journal of Polymer Science Polymer Chemistry Edition
Abstract:AbstractA new dry photoetching process that dose not required development step had been developed, utilizing the development‐free vapor photoetching effect of cinnamate‐type photopolymers.1–3 In contrast to obtaining positive patterns with cinnamate‐type photopolymers, this process with azide‐type photopolymers, which consist of axide crosslinking agent and polymers, gives negative patterns. Some preliminary studies on the development‐free vapor photoetching effect of azide‐type photopolymers were made. The results indicate that the polymers in this process only play the role of forming a film on the surface of silicon dioxide; and the crosslinking agent is the most important factor, which leads the difference of etching rate between the exposed and unexposed areas.
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