Abstract:The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere.

The Thermostability And Reactivity Of Gap Nanocrystals In Oxygen: From Gap Nanocrystals To Ga2o3 Nanocrystals

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Formation of Cubic GaN Nanocrystals: A Study of the Thermal Stability of GaP Nanocrystals under Nitrogen

Atomistic Simulations of the Crystalline-to-Amorphous Transformation of γ-Al 2 O 3 Nanoparticles: Delicate Interplay between Lattice Distortions, Stresses, and Space Charges

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga 2 O 3 Films through Plasma-Enhanced Technology

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

Preparation and Characterization of γ-Al2O3 Nanocrystals by Hydrothermal Assisted Sol-gel Method

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Novel Nanostructures of Β-Ga2o3 Synthesized by Thermal Evaporation

Crystallization and bandgap variation of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing process

Preparation and Characterization of Nanocrystalline Gamma-Al2o3 by Sol-Gel Process

Investigation of the Reaction Time and the Process of Synthesis of Gan Nanopowders by Ammoniating Ga2o3

Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions

Preparation and Characterization of gamma-Al2O3 Nanocrystals by Hydrothermal Assisted Sol-gel Method

Atomistic simulations of the crystalline-to-amorphous transformation of gamma-Al2O3 nanoparticles: delicate interplay between lattice distortions, stresses, and space charges

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

The Growth Process, Stability of GaP Nanocrystals and Formation of Ga3P Nanocrystals under Solvothermal Conditions in Benzene.

High-Pressure Behavior Of Beta-Ga2o3 Nanocrystals