Effect of Ag doping on the photoluminescence properties of ZnO films

Kaipeng Liu,Beifang Yang,Hongwei Yan,Zhengping Fu,Meiwang Wen,Youjun Chen,Jian Zuo
DOI: https://doi.org/10.1016/j.jlumin.2009.04.021
IF: 3.6
2009-01-01
Journal of Luminescence
Abstract:ZnO:Ag films were grown on Si (100) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT–PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550°C, the intensity of the near-band edge (NBE) emission at 378nm decreased and a new emission peak at 399nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399nm emission should be attributed to the electron transition from the conduction band to AgZn-related complexes defects radiative centers above the valence band.
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