Abstract:The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.

A Study of Surfactant-Induced Growth of Ag on Ag (111)

Simulation of Surfactant Effects on the Growth of Metal Homoexpitaxial Sb-Ag/Ag(111)

Surfactant-mediated Layer-by-layer Homoepitaxial Growth Ofcu/in/cu(100)and

A Theoretical Study of Surfactant Action in the Layer-by-layer Homoepitaxial Growth of Metals: the Case of in on Cu(111)

Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Exploration of Complex Multilayer Film Growth Morphologies: Stm Analysis and Predictive Atomistic Modeling for Ag on Ag(111)

Anomalous intralayer growth of epitaxial Si on Ag(111)

Surfactant-Mediated Surface Growth: Nonequilibrium Theory

Reaction Limited Aggregation with Anisotropic Island-Edge Exchange in Surfactant-mediated Epitaxy

Dimer-breaking-assisted Exchange Mechanism in Surfactant-Mediated Epitaxial Growth of Ge on Si(001):Ab Initiototal Energy Calculations

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Layer-By-Layer Growth of Ag on A Gan(0001) Surface

Studies on Dynamical Behavior in Reaction Limited Aggregation Model

Nucleation Transition and Nucleus Density Scaling in Surfactant-Mediated Epitaxy

Nucleation Behaviour in the Initial Stage of Surfactant-Mediated Epitaxial Growth

Kinetic Monte Carlo Simulation of Nucleation and Growth Behavior in Surfactant-Mediated Epitaxy

Surfactant-Mediated Growth of Nonequilibrium Interfaces

Surfactant mediated growth of Ti/Ni multilayers

Complex-Temperature Properties of the Ising Model on 2D Heteropolygonal Lattices

Aggregation Behavior of Au Atoms and Atomic Islands on Liquid Surfaces