Effects of Target Voltage on the Structure of the Film Prepared by Plasma-Based Ion Implantation and Deposition Method

K Yukimura,E Kuze,M Kumagai,T Maruyama,M Kohata,K Numata,H Saito,XX Ma
DOI: https://doi.org/10.1016/s0257-8972(03)00098-7
2003-01-01
Abstract:This article describes the characteristics of titanium nitride film prepared by the plasma-based ion implantation and deposition method using a titanium cathodic arc of d.c. 80 A. The surface morphology and structure of the film were affected by the voltage applied to the target. With increasing the negative voltage, the surface became smoother with a lesser number of particles. The grain structure varied from the stratified one at 0 kV to the columnar one at −5 to −20 kV, and further to the densely packed columnar one at −40 kV. These facts strongly suggested that the ions in the sheath played an important role in the deposition of the film.
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