Characterization of New SiO_2-YAG: Ce~(3+) Phosphor Prepared by Sol-Gel Method for WLED Application

DING Wei-jia,ZHANG Mei,YU Rui-jin,WANG Jing,SU Qiang

2008-01-01

Abstract:A new phosphor SiO2-YAG: Ce3+ was prepared by sol-gel method.The Xray diffraction(XRD) patterns disclosed that the phosphor was a pure Y3Al5O12 phase.The scanning electron microscopy(SEM) images showed that the samples had an average size about 10 μm.The decay time was short as 10.29 ns and 58.89 ns.A white light-emitting diode was fabricated by combining SiO2YAG:Ce3+ phosphor with a 462 nm-emitting InGaN chip.Its CIE chromaticity coordinates are(0.303,0.319).All the characterization indicated that SiO2-YAG: Ce3+ prepared by sol-gel method is promising as a potential phosphor without epoxy resin in WLED application.