Abstract:In this paper, we discussed recent studies done in our laboratories with a floating catalyst chemical vapor deposition (CVD) method. We can grow single- or double-walled carbon nanotubes (SWNTs/DWNTs) with different kinds of catalysts. Single-walled carbon nanotubes without amorphous carbon coating were prepared by thermally decomposing acetylene (C2H2) at the temperature range of 750–1200°C with ferrocene as catalyst. While with sulfur promoted ferrocene catalyst, double-walled carbon nanotubes were mass-produced by pyrolizing C2H2 at the temperature range of 900–1100°C. Furthermore, tunable growth of DWNTs with different diameter was achieved in our experiment. It is found that DWNTs produced at lower carbon partial pressure have much smaller inner tubes, even DWNTs with the smallest inner diameter of 0.4nm was found in here. As convenient and effective tool, radial breathing mode (RBM) of Raman scattering technique can be used to distinguish SWNTs from DWNTs. In further studies of Raman scattering with DWNTs, the possible match of the inner tubes and the outer tubes according to the RBM bands was assigned, and different chirality types were discussed according to the diameter and chirality dependence of resonant Raman vibration. We also investigated the temperature-dependent frequency shift of resonant Raman spectra of DWNTs in the range of 78–650K. We found that different RBM peaks, which are relative to different tube diameters, have different temperature coefficient of frequency shift, and the larger diameter carbon nanotubes have more RBM frequency downshift with increasing temperature. It is ascribed to the RBM frequency variation to the temperature dependence of the stretching force constant of C–C bond. Besides, Polarized Raman spectra were preformed on well-aligned SWNTs structure fabricated through post-growth method and found that the angular dependence of Raman intensity is consistent well with the predictions of the resonance Raman theory.

100 Mm Long, Semiconducting Triple‐Walled Carbon Nanotubes

Carbon Nanotubes: 100 Mm Long, Semiconducting Triple‐Walled Carbon Nanotubes (adv. Mater. 16/2010)

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Fabrication of Ultralong and Electrically Uniform Single-Walled Carbon Nanotubes on Clean Substrates

Growth Of High-Quality Single-Wall Carbon Nanotubes Without Amorphous Carbon Formation

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Direct growth of semiconducting single-walled carbon nanotube array

Towards the preparation of single-walled carbon nanotubes with average diameter of 1.2 nm

Superlong-oriented Single-Walled Carbon Nanotube Arrays on Substrate with Low Percentage of Metallic Structure

Large-Scale Synthesis of Long Double-Walled Carbon Nanotubes

Development of Microsturcture Based on Single-Wall Carbon Nanotube.

Controllable preparation and properties of single-/double-walled carbon nanotubes

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Synthesis and Enhanced Field-Emission of Thin-Walled, Open-Ended, and Well-Aligned N-Doped Carbon Nanotubes

Identification of the Structures of Superlong Oriented Single-Walled Carbon Nanotube Arrays by Electrodeposition of Metal and Raman Spectroscopy

Spatially Confined CVD Growth of High‐Density Semiconducting Single‐Walled Carbon Nanotube Horizontal Arrays

Rate-selected Growth of Ultrapure Semiconducting Carbon Nanotube Arrays

Direct Synthesis of Long Single-Walled Carbon Nanotube Strands.

Controllable preparation of triple-walled carbon nanotubes and their growth mechanism.