Abstract:Single-walled carbon nanotubes (SWNTs), a promising substitute to engineer prospective nanoelectronics, have attracted much attention because of their superb structures and physical properties. The unique properties of SWNTs rely sensitively on their specific chiral structures, including the diameters, chiral angles, and handedness. Furthermore, high-performance and integrated circuits essentially require SWNT samples with well-aligned arrays, of single conductive type and of pure chirality. Although much effort has been devoted to chemical vapor deposition (CVD) growth of SWNTs, their structure control, growth mechanism, and structural characterizations are still the primary obstacles for the fabrication and application of SWNT-based nanodevices. In this Account, we focus on our established CVD growth methodology to fulfill the requirements of nanodevice applications. A rational strategy was successfully exploited to construct complex architectures, selectively enrich semiconducting (s) or metallic (m) SWNTs, and control chirality. First, well-aligned and highly dense SWNT arrays are beneficial for nanodevice integration. For the directed growth mode, anisotropic interactions between the SWNTs and the crystallographic structure of substrate are crucial for their growth orientation. Just as crystals possess various symmetries, SWNTs with controlled geometries have the corresponding turning angles. Their complex architectures come from the synergetic effect of lattice and gas flow directed modes. Especially, the aligned orientations of SWNTs on graphite are chirality-selective, and their chiral angles, handedness, and (n,m) index have been conveniently and accurately determined. Second, UV irradiation and sodium dodecyl sulfate (SDS) washing-off methods have been explored to selectively remove m-SWNTs, leaving only s-SWNT arrays on the surface. Moreover, the UV-assisted technique takes the advantages of low cost and high efficiency and it directly produces a high ratio of s-SWNT arrays. We also designed a smart scotch tape to sort out the s-SWNTs and m-SWNTs from the as-grown mixture with 3-aminopropyl-triethoxysilane and triethoxyphenylsilane as glues, respectively. This is analogous to the mechanical exfoliation of a graphene sheet. Third, the obtained SWNT intramolecular junctions obtained by temperature-mediated CVD indicate that temperature can seriously affect the SWNT's chirality during its growth. Importantly, the cloning method can validate the chirality-controlled growth of SWNTs, and the cloning efficiency is significantly improved on a quartz surface. Well-aligned SWNT arrays with a high density and controlled structures are highly desirable for carbon nanoelectronics. We hope that the advanced methodology used here will promote their controlled preparation and provide insights into the growth mechanism of SWNTs.

Direct growth of semiconducting single-walled carbon nanotube array

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Superlong-oriented Single-Walled Carbon Nanotube Arrays on Substrate with Low Percentage of Metallic Structure

Spatially Confined CVD Growth of High‐Density Semiconducting Single‐Walled Carbon Nanotube Horizontal Arrays

Growth Of High-Density-Aligned And Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling The Conflict Between Density And Selectivity

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

100 Mm Long, Semiconducting Triple‐Walled Carbon Nanotubes

Preparation of Horizontal Single-Walled Carbon Nanotubes Arrays

Microwave Purification of Large-Area Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes

Photochlorination to prepare semiconducting single-walled carbon nanotube and its intramolecular junction

Diameter-Specific Growth Of Semiconducting Swnt Arrays Using Uniform Mo2c Solid Catalyst

Identification of the Structures of Superlong Oriented Single-Walled Carbon Nanotube Arrays by Electrodeposition of Metal and Raman Spectroscopy

Growth of close-packed semiconducting single-walled carbon nanotube arrays using oxygen-deficient TiO2 nanoparticles as catalysts

Selective Growth of Subnanometer Diameter Single-Walled Carbon Nanotube Arrays in Hydrogen-Free CVD.

Growth of Single-Walled Carbon Nanotube Arrays from Samarium on Substrates

Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs.

Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes with Controlled Structures for Nanodevice Applications.

Sorting out Semiconducting Single-Walled Carbon Nanotube Arrays by Preferential Destruction of Metallic Tubes Using Xenon-Lamp Irradiation