Hole Transport in One-Dimensional Aligned Gesi Quantum Dots at Low Temperatures

H. Y. Zhang,H. Yuan,B. Zhang,Z. Y. Zhong,Y. L. Fan,F. Lu,Z. M. Jiang
DOI: https://doi.org/10.1088/0022-3727/42/20/205302
2009-01-01
Abstract:One-dimensional (1D) aligned GeSi quantum dots (QDs) along 1D trenches have been prepared on the Si(001) substrates. The resistance values along the transverse and the longitudinal direction are significantly different at low temperatures. Two conductive layers are suggested to explain the difference. One is the boron doped layer which is at 10 nm underneath the QDs layer, the other is the QDs layer which is effective only for the longitudinal transport. Fitting the resistance as a function of temperature indicates that the conduction mechanism in both layers is two-dimensional Mott variable-range hopping. The magnetoresistance (MR) for the longitudinal transport at low temperatures shows a positive MR at low magnetic fields and a large negative MR at high fields. This behaviour is tentatively explained provided that the two conductive layers have different MR mechanisms.
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