Influence of Transparent Anode on Luminescent Performance of Near-Infrared Organic Light-Emitting Diodes

Guan He-song,Cheng Chuan-hui,Li Wan-cheng,Geng Dong-feng,Fan Zhao-qi,Chang Yu-chun,Zhao Wang,Guo Zhen-qiang,Du Guo-tong
IF: 3.1
2009-01-01
Chemical Research in Chinese Universities
Abstract:The optical transmission(200―2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/□), ITO(12 Ω/□), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/□), ITO(12 Ω/□) and PANI as anodes, respectively, were fabricated. The device structure was anode/4''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/ N,N'-di-1-naphthyl- N,N'-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/□), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/□) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Ω/□) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/□) are another reasons. Keywords Transparent electrode; Near-infrared(NIR); Organic light-emitting diode(OLED) Article ID 1005-9040(2009)-06-786-05
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