Study of nanoindentation and microstructure below the residual indent on Cu/Ta/SiO2/Si multilayer

Qian LU,Zi-jing WU,Xiao-jing WU,Wei-dian SHEN,Bin JIANG
DOI: https://doi.org/10.3969/j.issn.1000-6281.2008.04.005
2008-01-01
Abstract:Nanoindentation was adopted to investigate the compound hardness and elastic modulus of Cu/Ta/SiO_2/Si multilayer thin film system,which is a typical structure widely used in the manufacture of integrated circuit.In order to reveal the structure variance,a residual indent was cut by FIB.The cross-section of the residual indent was observed by scanning electron microscope(SEM),as well as scanning ion microscope(SIM).Transmission electron microscope(TEM) analysis showed that the delamination occurred at the interface between the Ta layer and SiO_2 layer of the residual indent,suggesting a weak bonding which is prone to destruction under the relatively large loads.
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