Research of Delamination Phenomenon Under Nanoindentation on Cu/Ta/SiO2/Si Thin Film

Zijing Wu,Xiaojing Wu,Qian Lu,Weidian Shen,Bin Jiang
DOI: https://doi.org/10.3969/j.issn.1003-353X.2008.09.014
2008-01-01
Abstract:Ta layer 50 nm thick and Cu layer 400 nm thick were sputtered on thermal silicon dioxide surface.Nanoindentation test was conducted on the sample surface by nanohardness tester to produce residual indents on the thin film.Scanning electron microscope(SEM),focused ion beam(FIB),transmission electron microscope(TEM) and energy dispersive X-ray analysis(EDX) were adopted to observe the residual indent and determine the place of delamination.It was found that delamination occurred at Ta/SiO2 interface with a maximum load of 69 mN.The different strain and the ability of elastic recovery of each material under stress were supposed to be the main reason of the delamination.
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