Abstract:We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$ tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A large structural set consisting of geometry, size, and molar fraction variations is worked out which also includes a few representative uniform strain cases. The tensor components are observed to display insignificant discrepancies even for the highly anisotropic shapes. The family of $g$-factor curves associated with these parameter combinations coalesces to a single universal one when plotted as a function of the gap energy, thus confirming a recent assertion reached under much restrictive conditions. Our work extends its validity to alloy QDs with various shapes and finite confinement that allows for penetration to the host matrix, placing it on a more realistic basis. Accordingly, the electrons in InGaAs QDs having $s$-shell transition energies close to 1.13 eV will be least susceptible to magnetic field. We also show that low indium concentration offer limited $g$-factor tunability under shape or confinement variations. These findings can be taken into consideration in the fabrication and the use of InGaAs QDs with $g$-near-zero or other targeted $g$ values for spintronic or electron spin resonance-based direct quantum logic applications.

L-Valley Electron G-Factor In Bulk Gaas And Alas

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Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic Structures of Gaas/Alas Lateral Superlattices

Enhancement and Anisotropy of the Landau G Factor in Modulation-Doped Al0.22Ga0.78N/GaN Heterostructures

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

Nematic Metal in a Multivalley Electron Gas: Variational Monte Carlo Analysis and Application to AlAs

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

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The In-Plane Anisotropy of the Effective G Factors in Al0.25Ga0.75N/GaN Based Quantum Point Contacts with Narrow Channels

Nematic metal in a multi-valley electron gas: Variational Monte Carlo analysis and application to AlAs

Effective G-Factors of Carriers in Inverted InAs/GaSb Bilayers

Lande-like Formula for the G Factors of Hole-Nanowire Subband Edges

Transient hot-electron transport in GaAs with a Γ-L-X band structure

Electrong-factor Distribution in Self-Assembled Quantum Dots

Electronic states in GaAs/AlAs lateral-surface superlattices

Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study

$g$-factor engineering with InAsSb alloys toward zero band gap limit