Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review
X Zhang,Russia ITMO University,V A Spiridonov,D I Panov,I M Sosnin,A E Romanov,Russia Togliatti State University,Russia Ioffe Institute,X. Zhang,,V.A. Spiridonov,D.I. Panov,I.M. Sosnin,A.E. Romanov,,,,,,,
DOI: https://doi.org/10.17586/2687-0568-2023-5-2-10-24
2023-01-01
Reviews on advanced materials and technologies
Abstract:Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.