Aligned silicon carbide nanowire crossed nets with high superhydrophobicity.

Jun Jie Niu,Jian Nong Wang,Qian Feng Xu
DOI: https://doi.org/10.1021/la800494h
IF: 3.9
2008-01-01
Langmuir
Abstract:Alianed silicon carbide. nanowire crossed nets (a-SiCNWNs) were directly synthesized by using a vapor-solid reaction at 1100 degrees C. Zinc sulfide was used as catalyst to assist the growth of a-SiCNWNs with small size and crystal structure. After functionalization with perfluoroalkysilane, a-SiCNWNs showed excellent superhydrophobic property with a high water contact angle more than 156 +/- 2 degrees, compared to random nanowires (147 +/- 2 degrees) and pure silicon wafers (101 +/- 2 degrees). The topographic roughness and chemical modification with CF2/CF3 groups contributed the better superhydrophobicity. Furthermore, the as-grown SiCNWNs can be scraped off and coated on other substrates such as pure silicon wafers. The novel nanowire coating with good superhydrophobicity displays extensive applications in silicon-related fields such as solar cells, radar,
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