Production of Dense Yttria-Stabilized Zirconia Thin Films by Dip-Coating for IT-SOFC Application

Yonglian Zhang,Jianfeng Gao,Guangyao Meng,Xingqin Liu
DOI: https://doi.org/10.1023/b:jach.0000021926.97895.f7
IF: 2.925
2004-01-01
Journal of Applied Electrochemistry
Abstract:Yttria-stabilized zirconia (YSZ) thin films were prepared by conventional and modified dip-coating techniques followed by heating to an appropriate temperature in air. Scanning electron microscopy showed that films of the thickness ranging from 20 to 30 μ m were dense and crack-free. The electrical properties of the films were investigated by ac impedance spectroscopy. La 0.8 Sr 0.2 MnO 3 paste was printed on to a YSZ electrolyte/anode assembly to create single fuel cells which were tested in the temperature range 650–800 °C. The results showed that both open circuit voltage (OCV) and maximum power density values of the cells with electrolytes produced by the modified dip coating were higher than those fabricated by conventional processing. At 800 °C, the OCV reached 0.98 V and a maximum power density of 190 mW cm −2 was attained, demonstrating that the modified dip coating process is a simple and cost-effective fabrication technique for IT-SOFCs, though further improvement is necessary.
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