Abstract:Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of nanowire quantum dots, avoiding sample variability and obtaining atomic scale precision on the fabricated dot size. In this paper, we present a reliable fabrication process to produce sub-10 nm Ge quantum dots (QDs), using a combination of ex-situ thermal annealing via rapid thermal annealing (RTA) and in-situ Joule heating technique in a transmission electron microscope (TEM). First we present in-situ direct joule heating experiments showing how the heating electrode could be damaged due to the formation of Al crystals and voids at the vicinity of the metal/NW contact, likely related with electro-migration phenomena. We show that the contact quality can be preserved by including an additional ex-situ RTA step prior to the in-situ heating. The in-situ observations also show in real-time how the exchange reaction initiates simultaneously from several locations underneath the Al contact pad, and the Al crystal grows gradually inside the initial Ge NW with the growth interface along a Ge(111) lattice plane. Once the reaction front moves out from underneath the contact metal, two factors jeopardize an atomically accurate control of the Al/Ge reaction interface. We observed a local acceleration of the reaction interface due to the electron beam irradiation in the transmission electron microscope as well as the appearance of large jumps of the interface in unpassivated Ge wires while a smooth advancement of the reaction interface was observed in wires with an Al2O3 protecting shell on the surface. Carefully controlling all aspects of the exchange reaction, we demonstrate a fabrication process combining ex-situ and in-situ heating techniques to precisely control and produce axial Al/Ge/Al NW heterostructures with an ultra-short Ge segment down to 8 nanometers. Practically, the scaling down of Ge segment length is only limited by the microscope resolution.

The temperature dependence of 1D germanium nanostructures grown in a small-diameter quartz tube cavity by vapor deposition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes

Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Growth And Electrical Transport Of Germanium Nanowires

Polycrystalline Tubular Nanostructures of Germanium

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

The Tunable Amorphous-Crystalline Transition Temperature by Indium-Doping on GeTe Thin Films.

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Temperature-dependent Growth Direction of Ultrathin ZnSe Nanowires.

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Synthesis of Germanium Nanowires

Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment