Design of a Low Voltage Neutralized CMOS Differential Low Noise Amplifier

SONG Rui-feng,LIAO Huai-lin,HUANG Ru,WANG Yang-yuan
DOI: https://doi.org/10.3969/j.issn.1005-9490.2007.02.031
2007-01-01
Abstract:A low-voltage high isolation CMOS differential low noise amplifier(LNA)using two off-state dummy MOSFETs to neutralize the gate-to-drain capacitance(Cgd)of common source amplifier's input stage is presented.A 5.8 GHz CMOS LNA was designed using the proposed technique in a 0.35 μm standard CMOS process.Results show that the designed LNA could be operated at supply voltage lower than 0.75 V and power consumption of 2.54 mW.At the designed frequency,the LNA achieved a forward gain S21 of 5.8 dB and 2.9 dB noise figure,the reverse isolation S12 is-30 dB,the input reflection coefficients S11 is-13.5 dB.
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