Abstract:In order to achieve a high breakdown voltage (BV) and to realize self-isolation in high-voltage ICs (HVICs), a novel high-voltage n-channel lateral double-diffused MOS (LDMOS) with a buried n-island layer (BNIL) placed at the interface between a p-type silicon-on-insulator (SOI) layer and a buried-oxide (BOX) layer (BNIL SOI) is proposed. Its breakdown mechanism is investigated theoretically and experimentally. In a high-voltage blocking state, the ionized donors in the depleted n-islands make the electric field in the n-islands monotonously increase rather than decrease, as exhibited in the p-SOI region. This leads to an increase in the SOI layer bottom-interface field strength from 10 V/μm in the conventional p-SOI to 27 V/μm in the BNIL SOI, and as result, the electric field strength in the BOX, i.e., EI, increases from 30 to 82 V/μm. The holes collected in the space between the depleted n-islands help maintain the high EI. Consequently, the BV is enhanced. The p-SOI layer, along with the implanted n-drift region and discontinuous buried n-islands, is demonstrated to have enhanced self-isolation, which removes the need for deep dielectric isolation trenches in power ICs. The dependence of breakdown characteristics and isolation performance on the structure parameters has been analyzed. A test self-isolation SOI HVIC with a 660-V BNIL LDMOS has been fabricated in a 20-μm SOI layer over a 4-μm BOX layer, which has verified the feasibility and validity of the new concept. © 2010 IEEE.

A Novel High Voltage LDMOS for HVIC with the Multiple Step Shaped Equipotential Rings

A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection

Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection

A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process

Novel SiC/Si Heterojunction LDMOS with Electric Field Modulation Effect by Reversed L-shaped Field Plate

Novel High Voltage LDMOS on Partial SOI with Double-Sided Charge Trenches

A High-Voltage Ldmos Compatible with High-Voltage Integrated Circuits on P-Type Soi Layer

The Research on Breakdown Voltage of High Voltage SOI LDMOS Devices with Shielding Trench

Breakdown Voltage Model and Structure Realization of a Thin Silicon Layer with Linear Variable Doping on a Silicon on Insulator High Voltage Device with Multiple Step Field Plates

Ultralow specific on-resistance high voltage LDMOS with a varible-K dielectric trench

A Novel High Voltage Soi Ldmos with Buried N-Layer in A Self-Isolation High Voltage Integrated Circuit

Numerical and experimental investigation on a novel high-voltage (>600-V) SOI LDMOS in a self-isolation HVIC

Analysis of the Breakdown Mechanism for an Ultra High Voltage High-Side Thin Layer Silicon-on-insulator P-Channel Lateral Double-Diffused Metal-Oxide Semiconductor

3-D analytical model of the high-voltage interconnection effect for SOI LDMOS

High voltage SJ-pLDMOS with Variation Lateral Doping drift layer

Novel High-Voltage Power Device Based on Self-Adaptive Interface Charge

Study For Safe Operating Area Of High Voltage Ldmos

Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial N-Buried Layer

High-Voltage SOI SJ-LDMOS with a Nondepletion Compensation Layer

High Voltage Sj-Ldmos With Charge-Balanced Pillar And N- Buffer Layer

High-Voltage LDMOS with Charge-Balanced Surface Low On-Resistance Path Layer