Abstract:The study of the desorption of hydrogen (H) and deuterium (D) on silicon in ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the discovery of the giant H/D isotope effect. It was later used in passivation of the SiO/sub 2//Si interface, leading to large improvement of the hot-carrier lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p. 2526, 1996). It is known that desorption mechanisms for the Si-H/D bonds by STM are multiple vibrational excitation at low voltage (T.-C. Shen et al, Science vol. 268, p. 1590, 1995). However, the chemical environment of the SiO/sub 2//Si interface in MOS devices is very different from that of Si in UHV, because in MOS transistors, electrons not only directly excite the Si-H/D bonds, but also are injected into the oxide. Recently, we showed that electrons that are injected into the oxide may not break Si-H/D bonds and only electrons that remain in the channel (and do not overcome the oxide/Si barrier) break the Si-H/D bonds (Z. Chen et al, IEEE Electron Dev. Lett. vol. 21, p. 24, 2000). Although it was suggested that the mechanisms for breakage of Si-H/D bonds in MOS transistors should be analogous to the explanation for the STM experiments, there is no direct experimental evidence to support the suggestion. In this paper, we present experimental results to show that the quantitative H/D isotope effect is dependent on the channel current density, which support the multiple vibrational excitation mechanisms.

Theoretical Investigation of an Intermediate in the STM Tip-Induced Atomic Process on H/Si(100) Surfaces

Theoretical Model and Experimental Analysis of STM Images on the Surface of the Monocrystalline Si

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111) 7×7 SURFACE

Atomistic Aspects of Silicide Reactions Studied with STM

Scanning Tunneling Microscopy of Photoexcited Carriers at the Si(001) Surface

Vibration of the Dimer on Si(001) Surface Excited by STM Current

Modifying the STM Tip for the ' Ultimate ' Imaging of the Si(111)-7×7 Surface and Metal-supported Molecules

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

Tip-Induced $β$-Hydrogen Dissociation in an Alkyl Group Bound on Si(001)

An accurate many-body expansion potential energy surface for SiH2 (1(1) A ') using a switching function formalism

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

Direct Visualization of Hydrogen-Transfer Intermediate States by Scanning Tunneling Microscopy

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Non-local Atomic Manipulation on Semiconductor Surfaces in the STM: the Case of Chlorobenzene on Si(111)-7×7.

Confinement-Induced Catalytic Dissociation of Hydrogen Molecules in a Scanning Tunneling Microscope

Studies of Beam Optics and Scattering in the Next Linear Collider Post-Linac Collimation System

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

High-Resolution Scanning Tunneling Microscopy for Molecules

Linear Chains of Styrene and Methyl-Styrene Molecules and their Heterojunctions on Silicon: Theory and Experiment

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage